学术报告20240813:Weak Galerkin finite element method for semiconductor device simulation

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报告题目Weak Galerkin finite element method for semiconductor device simulation

报告人:高夫征 教授(山东大学)

报告摘要:This talk will report weak Galerkin finite element methods for semiconductor device simulations. Including drift-diffusion (DD) and high-field (HF) models, which involves not only first derivative convection terms but also second derivative diffusion terms, as well as a coupled Poisson potential equation. The main difficulties in the analysis include the treatment of the nonlinearity and coupling of the models. The optimal order error estimates in a discrete H1 norm and the standard L2 norm are derived. Numerical experiments are presented to illustrate our theoretical analysis. Moreover, numerical schemes also work out for the discontinuous diffusion coefficient problems

报告人简介:高夫征,山东大学数学学院教授/博士生导师,山东省计算数学专委会成员,泰山学者团队骨干成员(2010.06-2015.08),Frontiers in Physics-Statistical and Computational Physics期刊评审编辑(2022.10-至今)。美国阿肯色大学小石城校区访问学者。研究方向为偏微分方程数值方法,尤其是弱Galerkin有限元法、间断Galerkin有限元法、有限体积法等数值方法的分析与应用研究。承担完成国家级、省部级科研项目十余项、中石化国家科技攻关外协项目一项。现主持国家自然科学基金重点项目子课题一项,在国际知名学术期刊发表SCI论文四十余篇。

报告时间:2024年8月13日,下午19:00-20:30

报告地点:明远楼410

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